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    Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode

    Research on the Temperature Characteristics of 1 200 V 4H-SiC Junction Barrier Schottky Diode by YUAN Hao, SONG Qingwen, TANG Xiaoyan, YUAN Lei, ZHANG Yimen, ZHANG Yuming

    Published 2016-01-01
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