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    A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors

    A Stepped Gate Oxide Structure for Suppressing Gate-Induced Drain Leakage in Fully Depleted Germanium-on-Insulator Multi-Subchannel Tunneling Field-Effect Transistors by Rui Chen, Liming Wang, Ruizhe Han, Keqin Liao, Xinlong Shi, Peijian Zhang, Huiyong Hu

    Published 2025-03-01
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