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    SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current

    SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current by Kuan-Chieh Chen, Jiancheng Wu, Pheiroijam Pooja, Albert Chin

    Published 2025-04-01
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