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  1. 1
    Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS

    Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS by Patrick Diehle, Stephan Gierth, Mickael Lejoyeux, Karen Geens, Matteo Borga, Frank Altmann

    Published 2025-03-01
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  2. 2
    A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

    A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives by Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier

    Published 2025-06-01
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