Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz) by A. P. Dolgolenko, G. P. Gaidar, P. G. Litovchenko

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Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

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Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

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Radiation hardness of silicon doped by germanium with high concentration of free oxygen by M. D. Varentsov, G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko

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Long-range effect in condensed matter and its revealing in implanted with high energy light ions silicon by A. A. Groza, P. G. Litovchenko, M. I. Starchik, V. I. Khivrych, G. G. Shmatko, V. I. Varnina

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Electrophysical characteristics of initial and irradiated GаAsP LEDs structures by O. V. Konoreva, P. G. Litovchenko, O. I. Radkevych, V. M. Popov, V. P. Tartachnyk, V. V. Shlapatska

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Influence of the germanium and oxygen impurities on the radiation stability of the silicon by A. A. Groza, V. I. Varnina, P. G. Litovchenko, L. S. Marchenko, M. I. Starchik, L. I. Barabash, S. V. Berdnichenko

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Influence of radiation on the electrophysical parameters of GaAsP LEDs by R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, P. G. Litovchenko, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko

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Surface distribution of the emitting intensity of GaP light-emitting diodes by O. V. Konoreva, P. G. Litovchenko, E. V. Maliy, I. V. Petrenko, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska

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Possibilities of increase of radiation firmness of semiconductor materials by P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik

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