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  1. 1
    Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

    Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas by Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang

    Published 2025-05-01
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  2. 2
    Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation

    Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation by Dongmin Kim, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Pendar Azaripour Masouleh, Jisung Lee, Joonhyun Kwon, Chul‐Heung Kim, Hyunsang Hwang

    Published 2025-06-01
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