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  1. 1
    Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics

    Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics by Peiran Wang, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang, Hongyu Yu

    Published 2025-06-01
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  2. 2
    Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiN<sub>x</sub> Stress-Engineered Technique

    Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiN<sub>x</sub> Stress-Engineered Technique by Chenkai Deng, Chuying Tang, Peiran Wang, Wei-Chih Cheng, Fangzhou Du, Kangyao Wen, Yi Zhang, Yang Jiang, Nick Tao, Qing Wang, Hongyu Yu

    Published 2024-11-01
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