Single V2 defect in 4H silicon carbide Schottky diode at low temperature by Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann, Di Liu, Rainer Stöhr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Guodong Bian, Adam Gali, Vadim Vorobyov, Jörg Wrachtrup

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