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    Influence of Device Design Parameters on Static and Dynamic Performances of Trench Gate IGBT

    Influence of Device Design Parameters on Static and Dynamic Performances of Trench Gate IGBT by Luther Ngwendson

    Published 2017-01-01
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  2. 2
    3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance

    3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance by ZHOU Feiyu, NING Xubin, Luther Ngwendson, XIAO Qiang, Ian Deviny, DAI Xiaoping

    Published 2017-01-01
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