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    Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor

    Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor by Kuan-Min Kang, Jia-Wei Hu, Chih-Fang Huang

    Published 2025-06-01
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