Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors by E. Bendada, K. Raïs

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An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices by Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily

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Surface Recombination Via Interface Defects in Field Effect Transistors by E. Bendada, K. Raïs, P. Mialhe, J. P. Charles

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Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors by M. Rahmoun, E. Bendada, A. El Hassani, K. Raïs

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New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature by Y. Amhouche, A. El Abbassi, K. Raïs, E. Bendada, R. Rmaily

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Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors by A. El Abbassi, Y. Amhouche, E. Bendada, R. Rmaily, K. Raïs

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