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  1. 1
    Highly durable and energy‐efficient probabilistic bits based on h‐BN/SnS2 interface for integer factorization

    Highly durable and energy‐efficient probabilistic bits based on h‐BN/SnS2 interface for integer factorization by Joon‐Kyu Han, Jun‐Young Park, Shania Rehman, Muhammad Farooq Khan, Moon‐Seok Kim, Sungho Kim

    Published 2025-07-01
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  2. 2
    Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

    Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel by Jae Hoon Lee, Yonghee Lee, Joon‐Kyu Han, Kyung Do Kim, Seung Ryong Byun, Hyeon Woo Park, Cheol Seong Hwang

    Published 2025-03-01
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