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    Plasma-assisted molecular beam epitaxy growth of high-density nitrogen-doped Ga2O3 thin films on Ga2O3 (010) substrates by simultaneously supplying oxygen and nitrogen radicals

    Plasma-assisted molecular beam epitaxy growth of high-density nitrogen-doped Ga2O3 thin films on Ga2O3 (010) substrates by simultaneously supplying oxygen and nitrogen radicals by Kura Nakaoka, Shoki Taniguchi, Tomoki Uehara, Jin Inajima, Kohki Tsujimoto, Yusuke Teramura, Satoko Honda, YongGu Shim, Masataka Higashiwaki

    Published 2025-05-01
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