Development of biodegradable PLA/Nanoclay/ZnO polymer films for future Industrial packaging applications by A. Akshaykranth, J. Ajayan, N. Anitha

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Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer by Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan

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Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review by J. Ajayan, Vakkalakula Bharath Sreenivasulu, N. Aruna Kumari, S. Sreejith, Subhajit Das

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Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review by J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal

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LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications by B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Amit Krishna Dwivedi

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