Showing 1 - 2 results of 2 for search 'I. G. Atabaev', query time: 0.01s Refine Results
  1. 1
    Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

    Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron by I. G. Atabaev, Kh. N. Juraev

    Published 2018-01-01
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  2. 2
    Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

    Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al by I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    Published 2017-01-01
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