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    Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm

    Degenerate GaN source–drain AlN/AlxGa1−xN/AlN high electron mobility transistors with a high breakdown electric field reaching 6.0 MV/cm by Kohei Ueno, Ryota Maeda, Takao Kozaka, Hiroshi Fujioka

    Published 2025-04-01
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