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  1. 1
    Study on Surge Capacity of SiC MOSFET Based on Channel State

    Study on Surge Capacity of SiC MOSFET Based on Channel State by Heli MENG, Erping DENG, Wenjie WANG, Yongzhang HUANG

    Published 2021-09-01
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  2. 2
    6 kV/180 °C High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices

    6 kV/180 °C High Temperature Reverse Bias Test Equipment for High Voltage and High Power Devices by Erping DENG, Heli MENG, Yanhao WANG, Zhibin ZHAO, Yongzhang HUANG

    Published 2021-02-01
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