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  1. 1
    Metal-halide perovskites under pressure: Effect of anisotropic deformation on optoelectronic properties

    Metal-halide perovskites under pressure: Effect of anisotropic deformation on optoelectronic properties by Siyu Zhang, Mengyu Liu, Jie Su, Zhenhua Lin, Haidong Yuan, Lixin Guo, Yue Hao, Jingjing Chang

    Published 2024-12-01
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  2. 2
    Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate

    Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate by Haidong Yuan, Liwei Wang, Jiangming Guo, Ruimei Yuan, Zhenhua Lin, Jincheng Zhang, Lixin Guo, Yue Hao, Jingjing Chang

    Published 2025-06-01
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