Effect of Oxidation Temperature and Chlorine Source on the Gate Oxidation Process for High Power IGBT by ZHANG Quan, LIU Guoyou, HUANG Jianwei

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Investigation of Deep Trench Process for Trench-gate IGBT by LUO Haihui, HUANG Jianwei, DEVINY Ian, LIU Guoyou

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750 A/6 500 V High Power Density IGBT Module for Rail Transit Application by LIU Guoyou, LUO Haihui, LI Qunfeng, HUANG Jianwei, QIN Rongzhen

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Research on the Key Technology of Trench Gate IGBT by HUANG Jianwei, YANG Xinzhu, LIU Gen, LUO Haihui, YU Wei, TAN Canjian

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Effect of P-well Interconnection in Dummy Trench Area on Properties of Trench IGBT by LUO Haihui, XIAO Qiang, YU Wei, YANG Xinzhu, TAN Canjian, HUANG Jianwei, LIU Guoyou

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Fast detection method for radionuclides based on Sequential Bayesian approach by WAN Linjian, ZHANG Xuan, ZHANG Chunlei, HUANG Jianwei, LIU Jiacheng, ZHANG Xiaole, LI Dehong, YANG Zhijun

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International Comparison Results of Personal Dose Equivalent Hp(0.07) and Hp(3) in Beta Radiation by ZHANG Xuan1, 2, HUANG Jianwei1, LI Dehong1, , LIU Chuanfeng1, ZHANG Jian1, YANG Zhijun1, YANG Yang1

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