Showing 1 - 3 results of 3 for search 'Farid Medjdoub', query time: 0.01s Refine Results
  1. 1
    Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

    Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors by François Grandpierron, Elodie Carneiro, Lyes Ben-Hammou, Jeong-Sun Moon, Farid Medjdoub

    Published 2024-11-01
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  2. 2
    Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications

    Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications by Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Pierre Brosselard, Eric Frayssinet, Florian Bartoli, Yvon Cordier, Farid Medjdoub, Dominique Planson, Cyril Buttay

    Published 2025-06-01
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  3. 3
    Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

    Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility by Julien Bassaler, Jash Mehta, Idriss Abid, Leszek Konczewicz, Sandrine Juillaguet, Sylvie Contreras, Stéphanie Rennesson, Sebastian Tamariz, Maud Nemoz, Fabrice Semond, Julien Pernot, Farid Medjdoub, Yvon Cordier, Philippe Ferrandis

    Published 2025-01-01
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