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    Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer

    Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer by Wenting Zhang, Junliang Shang, Shuang Li, Hu Liu, Mengqi Ma, Dongping Ma

    Published 2025-02-01
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