Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications by Ndembi Ignoumba-Ignoumba, Camille Sonneville, Adrien Bidaud, Pierre Brosselard, Eric Frayssinet, Florian Bartoli, Yvon Cordier, Farid Medjdoub, Dominique Planson, Cyril Buttay

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A Novel Isolation Approach for GaN-Based Power Integrated Devices by Zahraa Zaidan, Nedal Al Taradeh, Mohammed Benjelloun, Christophe Rodriguez, Ali Soltani, Josiane Tasselli, Karine Isoird, Luong Viet Phung, Camille Sonneville, Dominique Planson, Yvon Cordier, Frédéric Morancho, Hassan Maher

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