Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT by Palash Das, Dhrubes Biswas

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Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT by Palash Das, Dhrubes Biswas

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Strategic Review of Arsenide, Phosphide and Nitride MOSFETs by Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas

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New Evolving Directions for Device Performance Optimization Based Integration of Compound Semiconductor Devices on Silicon by Partha Mukhopadhyay, Palash Das, Edward Y. Chang, Dhrubes Biswas

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