David Esseni

David Esseni from the University of Udine, Udine, Italy was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2013 ''for contributions to characterization and modeling of mobility and quasi-ballistic transport in MOS transistors''. Provided by Wikipedia
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  1. 1
    Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

    Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer by Chiara Rossi, Daniel Lizzit, David Esseni

    Published 2025-01-01
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  2. 2
    An LGD model with extrinsic nucleations for polarization dynamics in ferroelectric materials and devices

    An LGD model with extrinsic nucleations for polarization dynamics in ferroelectric materials and devices by Mattia Segatto, Daniel Lizzit, David Esseni

    Published 2025-06-01
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