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    A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

    A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives by Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier

    Published 2025-06-01
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