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  1. 1
    Numerical analysis of the use of multiple inlet plates to improve the thickness uniformity of silicon epitaxial layers during atmospheric pressure chemical vapor deposition

    Numerical analysis of the use of multiple inlet plates to improve the thickness uniformity of silicon epitaxial layers during atmospheric pressure chemical vapor deposition by Ba-Phuoc Le, Jyh-Chen Chen, Chieh Hu, Wei-Jie Lin, Chun-Chin Tu, Liang-Chin Chen

    Published 2024-12-01
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  2. 2
    Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity

    Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity by Ba-Phuoc Le, Jyh-Chen Chen, Chieh Hu, Wei-Jie Lin, Chun-Chin Tu, Liang-Chin Chen

    Published 2025-05-01
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