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  1. 1
    Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

    Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers by Zhenyu Wang, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang, Hongping Ma

    Published 2025-04-01
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  2. 2
    High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO<sub>2</sub>/SiO<sub>2</sub> Stacked Gate Dielectric in Trench Structures

    High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO<sub>2</sub>/SiO<sub>2</sub> Stacked Gate Dielectric in Trench Structures by Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang

    Published 2025-02-01
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