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    Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

    Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate by Changda Zheng, Li Wang, Chunlan Mo, Wenqing Fang, Fengyi Jiang

    Published 2013-01-01
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