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    Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

    Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface by Taehwan Moon, Hyun Jae Lee, Seung Dam Hyun, Baek Su Kim, Ho Hyun Kim, Cheol Seong Hwang

    Published 2020-06-01
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