Probe device for electrical measurements of parameters thin doped films ZnO by A. I. Blesman, R. B. Burlakov

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Electrical and photoelectric properties of photocell on base of Schottky barrier contact Au-n-GaAs by A. I. Blesman, R. B. Burlakov

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Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si by A. I. Blesman, R. B. Burlakov, D. A. Polonyankin

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New materials based on InP-ZnS system for semiconductor gas analyzers by I. A. Kirovskaya, R. V. Ekkert, A. O. Ekkert, E. V. Mironova, I. Yu. Umansky, A. I. Blesman, D. A. Polonyankin, L. V. Kolesnikov, E. N. Kopylova, V. B. Goncharov

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