Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics by V. A. Solodukha, U. A. Pilipenko, A. A. Omelchenko, D. V. Shestovski

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Formation of a gate dielectric of nanometer thickness by rapid thermal treatment by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, D. V. Shestovski

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Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, D. V. Shestovski

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